Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

1 1 1 1 1 Rating 4.87 (15 Votes)

PROJECT TITLE :

Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

ABSTRACT :

Reduction of parasitic capacitance within the gate region by adopting a cavity structure improved the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors (HEMTs). We achieved a high cutoff frequency $f_T$ of 517 GHz and a minimum noise figure $NF_min$ of zero.seventy one dB at ninety four GHz even when passivation and interconnection method. Scaling of the gate-to-channel distance and gate-recess length is additionally effective in enhancing transconductance $g_m$ to enhance $f_T$ and $NF_min$. The cavity structure could be a promising candidate that may facilitate in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs - 4.9 out of 5 based on 15 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...