PROJECT TITLE :
Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs
Reduction of parasitic capacitance within the gate region by adopting a cavity structure improved the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors (HEMTs). We achieved a high cutoff frequency $f_T$ of 517 GHz and a minimum noise figure $NF_min$ of zero.seventy one dB at ninety four GHz even when passivation and interconnection method. Scaling of the gate-to-channel distance and gate-recess length is additionally effective in enhancing transconductance $g_m$ to enhance $f_T$ and $NF_min$. The cavity structure could be a promising candidate that may facilitate in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections.
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