PROJECT TITLE :

First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability

ABSTRACT :

Quasi-planar segmented-channel MOSFETs (SegFETs) with gate lengths right down to $sim$forty five nm are fabricated employing a typical process flow by beginning with a corrugated-silicon substrate. Compared with control devices (fabricated using the same method flow, but with a planar-silicon substrate), the SegFETs show reduced short-channel result due to enhanced electrostatic integrity. Despite having a smaller physical channel width, the SegFET can achieve comparable drive current per unit layout space as the standard planar MOSFET style.


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