PROJECT TITLE :
A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs
Primarily based on the bulk conduction mode of the quasi-a pair of-D scaling theory, an analytical threshold voltage model for brief-channel junctionless (JL) double-gate MOSFETs is developed for the primary time. The model explicitly shows how the device parameters like the silicon thickness, oxide thickness, drain bias, and channel length have an effect on the edge voltage degradation. The model will conjointly be extended to modeling accumulation/inversion operation mode for JL/junction-based double-gate MOSFETs. The model is verified by a pair of-D device simulations and can be simply used to explore the brink voltage behavior of the JL double-gate MOSFETs thanks to its straightforward formula and computational potency.
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