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Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

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PROJECT TITLE :

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

ABSTRACT :

Parasitic components are becoming increasingly vital with geometric scaling in nanoscale electronic devices and interconnects. The parasitic contact resistance between metal electrodes and multilayer graphene (MLG) may be a key factor determining the performance of MLG-primarily based structures in various applications. The available strategies for characterizing metal–MLG contact interfaces rely on a model based mostly on the prime-contact structure, however it ignores the sting contacts which will greatly cut back the contact resistance. Thus, in the current work, a rigorous theoretical one-D model for metal–MLG contact is developed for the primary time. The contribution of the key components of resistance—the prime and edge contacts (aspect and end contacts) and therefore the MLG sheet resistivity—to the total resistance of the structure is included within the model. The one-D model is compared to a three-D model of the system, and a method for investigation and optimization of the range of validity of the one-D model is developed. The results of this work offer valuable insight to both the characterization and style of metal–MLG contacts.


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Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling - 4.6 out of 5 based on 54 votes

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