Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM


One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by 2 to a few orders of magnitude by reducing the body–junction electric field. However, the retention time distribution, that is especially caused by the generation–recombination center density variation, remains similar.

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