PROJECT TITLE :
A Quasi-Analytical Model for Energy-Delay-Reliability Tradeoff Studies During Write Operations in a Perpendicular STT-RAM Cell
One in all the most important challenges that the present spin-transfer-torque-based random access memory (STT-RAM) trade faces is maintaining high thermal stability while attempting to modify at intervals a given voltage pulse and energy price. During this paper, we have a tendency to present a physics-based analytical model that uses a changed Simmons tunneling expression to capture the spin-dependent tunneling during a magnetic tunnel junction (MTJ). Coupled with an analytical derivation of the important switching current primarily based on the Landau–Lifshitz–Gilbert equation and also the write error rate derived from a solution to the Fokker–Planck equation, this model provides us a quick estimate of the energy-delay-reliability tradeoffs in perpendicular STT-RAM devices thanks to thermal fluctuations. In different words, the model provides a straightforward manner to calculate the energy consumed throughout write operation that ensures a bound error rate and delay time whereas being numerically way less intensive than a full-fledged stochastic calculation. We have a tendency to calculate the worst case energy consumption during antiparallel (AP)-to-parallel (P) and P-to-AP switchings and quantify how increasing the anisotropy field $H_K$ and lowering the saturation magnetization $M_S$ can considerably scale back the energy consumption. A case study on how producing variations of the MTJ cell will affect the energy consumption and delay is additionally reported.
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