PROJECT TITLE :
Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm
ON-current $(I_rm on)$ variability is comprehensively investigated for fin-formed FETs (FinFETs) by measurement-based analysis. Variation sources of $I_rm on$ are successfully extracted as freelance contributions of threshold voltage $V_t$, transconductance $G_m$, and parasitic resistance $R_rm para$. In addition to $V_t$ variability, $G_m$ variation exhibits a linear relationship within the Pelgrom plot. However, the $G_m$ variation is not reduced with scaling the gate dielectric thickness unlike the $V_t$ variation. Perspective for fourteen-nm FinFETs represents that the $G_m$ variation can be the dominant $I_rm on$ variation source. A answer to cut back the $G_m$ variation for the FinFET is also proposed.
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