Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal–Oxide Polymer Structure

1 1 1 1 1 Rating 4.80 (83 Votes)

PROJECT TITLE :

Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal–Oxide Polymer Structure

ABSTRACT :

Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox1/f^gamma$ behavior, with $gamma = hbox1$ within the ohmic region and with $gamma = hbox3/2$ at high bias beyond the ohmic region. The exponent $gamma = hbox3/2$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox1/f$ noise in thin films has an estimated price of $hbox10^-21 hboxcm^2/Omega$, which is typical for metals or doped semiconductors. This price in combination with the low diode current indicates that the $hbox1/f$ noise is generated within the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that this in bistable nonvolatile recollections is filamentary.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal–Oxide Polymer Structure - 4.8 out of 5 based on 83 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...