High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects


Low- and high-field transports are investigated for $hboxHfO_2$-primarily based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) $(EOT = hbox6.4-hbox8.4 hboxrmAA)$ achieved by a remote interface layer (IL) scavenging technique. An in depth comparison with a SiON reference demonstrates not one of the detrimental effects from $hboxHfO_2$-connected Coulomb nor phonon further scattering on the high-field velocity. Increased surface roughness might scale back the high-field velocity by 20p.c for the device with the thinnest IL. This is explained by a rise of the backscattering that reduces the ballistic efficiency for the shortest devices $(L_rm MET = hbox25 hboxnm)$. However, the on-state current $(I_rm ON)$ for UTEOT devices has the most effective performance at a given high-lateral-field velocity. Thus, EOT scaling remains a legitimate tool for $I_rm ON$-performance improvement for CMOS scaling conjointly with new architectures and substrates.

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