BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control


In this paper, we have a tendency to gift an correct and computationally economical model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with robust back-gate management. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a regular analytical resolution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement result, drain-induced barrier lowering, and self-heating impact. The model has correct behavior for derivatives of the drain current and shows an glorious agreement with experimental data for long- and short-channel devices with eight-nm-skinny silicon body and 10-nm-thin BOX.

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