High-Frequency Modeling of Poly-Si Thin-Film Transistors for Low-Cost RF Applications


In this paper, we gift high-frequency characteristics of transistors and inductors in low-temperature polycrystalline-silicon skinny-film transistor (LTPS TFT) technology for low-cost radio frequency applications. From two-D device simulations, we show that the linearity of LTPS TFTs is independent of the channel length because of the presence of grain boundaries. Furthermore, since LTPS TFTs will be fabricated on insulating substrates, on-chip spiral inductors on such substrates have negligible substrate loss, leading to top quality ( $Q$) issue. From electromagnetic simulations, we observe that spiral inductors in LTPS TFT technology show lower parasitics, higher $Q$ issue, and higher self-resonance frequency $(f_rm RES)$ compared to typical bulk CMOS inductors having similar inductance. Such high $Q$ of inductors allows compensating for low $g_m$ of LTPS TFTs.

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