PROJECT TITLE :
Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells
In this paper, for the first time, we tend to report the fabrication of a resistive random access memory (ReRAM) device using Ti/NiN/Pt structure cells and its observed bipolar resistive-switching characteristics within the pulsed mode. In these experiments, NiN-primarily based ReRAM showed excellent switching behavior underneath $+$a pair of.four V/3.three ns and $-$2 V/3.3 ns with a high-to-low resistance ratio $>hbox10^2$. The conduction mechanisms at high and low resistance states were verified by ohmic behavior (or conducting filament) and changed area charge-restricted conduction from the Mott (metal–insulator) transition, respectively. The resistive-switching method is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in NiN films. In the reliability test, the device showed an endurance of $>hbox10^7$ cycles and a retention time of $>hbox10^5$ s at 85 $^circhboxC$. These results show that NiN-based ReRAM can be used as a promising high-speed memory device.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here