Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Performance Evaluation of III–V Nanowire Transistors

1 1 1 1 1 Rating 4.80 (49 Votes)

PROJECT TITLE :

Performance Evaluation of III–V Nanowire Transistors

ABSTRACT :

III–V nanowire (NW) transistors are an rising technology with the prospect of high performance and low power dissipation. Performance evaluations of those devices, however, have centered mostly on the intrinsic properties of the NW, excluding any parasitic components. During this paper, a III–V NW transistor design is investigated, based on a NW array with a sensible footprint. Based mostly on scaling rules for the structural parameters, three-D representations of the transistor are generated, and also the parasitic capacitances are calculated. An entire optimization of the structure is performed based mostly on the RF performance metrics $f_T$ and $f_max$, using intrinsic transistor information combined with calculated parasitic capacitances and resistances. The result's a roadmap of optimized transistor structures for a group of technology nodes, with gate lengths down to the 10-nm-length scale. For every technology node, the performance is predicted, promising operation in the terahertz regime. The resulting roadmap has implications as a reference each for benchmarking and for device fabrication.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Performance Evaluation of III–V Nanowire Transistors - 4.8 out of 5 based on 49 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...