Design of Novel High-$Q$-Factor Multipath Stacked On-Chip Spiral Inductors


High-$Q$-issue and little-occupying-space inductors are necessity for monolithic-microwave integrated-circuit applications. This paper presents a novel multipath crossover-interconnection octagon stacked spiral inductor that is fabricated with the 0.13- $muhboxm$ SiGe BiCMOS process. The metal wire of the spiral inductor is split into multiple paths consistent with the method rule and therefore the depth of the skin effects at the response frequency. The width of a single path is usually but or equal to the skin depth. This thus-known as multipath technique effectively depresses the proximity and skin effects, therefore contributing to the high $Q$-factor of the inductors and reducing the occupying area. The crossover-interconnection methodology can build the full path lengths approximately equal to every alternative. This connected manner lowers the current-crowding impact, that additionally enhances the $Q$-issue. Using the proposed technique, we tend to have observed up to 63.8percent improvement in the $Q$-peak (a pair of.three GHz) as compared to conventional stacked inductors (one.five GHz) and about forty four% improvement within the occupying area as compared to conventional single inductors fabricated on silicon substrates.

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