A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Epilayer on Si Substrates


Formation and electrical properties of nickel silicidized n-type Si and $ hboxSi_1-xhboxGe_x$ epilayers on a Si substrate are comparatively studied. The development of thermal stability of germanosilicide can be attributed to the thicker NiSi(Ge) film and also the delay of phase transformation with Ge incorporation, yet as the reduction in interface energy with Ge segregation at the interface. The Schottky-barrier heights (SBHs) of the contacts shaped by sputtering Ni on the strained $hboxSi_1-xhboxGe_x$ ($x = hbox0.07$ and 0.two) epilayers significantly increase when germanosilicidation and with increasing annealing temperature, markedly contrasting to the fast drop of SBH of the silicidized Si contact made by the same method. The raise of SBH of the $hboxNi/Si_1-xhboxGe_x$ contact after germanosilicidation and with increasing annealing temperature is dominated by a Fermi-level pinning impact thanks to Ge segregation at the interface and also the generation of dislocations driven by strain relaxation within the $hboxSi_1-xhboxGe_x$ epilayers, rather than the reduction in work function when Ni transforms to NiSiGe throughout the germanosilicidation process.

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