PROJECT TITLE :
Some Failure Mechanisms in Charge-Sensitive Infrared Phototransistors
For an infrared photon detector, like charge-sensitive infrared phototransistors (CSIPs), we have a tendency to propose and use a capacitive charging method to review some failure mechanisms that disable the photon response of CSIPs. Two failure mechanisms are highlighted, specifically interquantum well (QW) leakage and low tunneling probability for intersubband-transition-excited electrons. A correlation between the Al content in the inter-QW AlGaAs barrier and also the failure mechanism type are discussed. On the other hand, the previously unexplained puzzle that the success of photon response is solely weakly addicted to the QW electron mobility that is attributed to an imperfect inter-QW barrier.
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