Design Rules for IGZO Logic Gates on Plastic Foil Enabling Operation at Bending Radii of 3.5 mm


Findings obtained from bending experiments with mechanically versatile InGaZnO-primarily based thin-film transistors are used to derive design rules for versatile InGaZnO-based n-channel metal–oxide–semiconductor logic circuits. Primarily based on the developed style rules, versatile nand gates, inverters, and 5-stage ring oscillators are fabricated directly on free-standing plastic foils at temperatures $leqhbox150 ^circhboxC$. Geometrically well-designed circuits operated at a supply voltage of five V are exposed to tensile mechanical strains, induced by bending, up to 0.seventy two$p.c$ without performance degradation. This corresponds to a bending radius of three.five mm. At the identical time, will increase in the rise time by a factor of ca two and reductions within the high and low output voltage levels by ca ten$p.c$ and 50 $percent$ are observed for circuits with disadvantageous geometrical design. Ring oscillators designed to be operated under strain show an increase in oscillation frequency from twenty two.9 kHz (flat substrate) to twenty three.thirty two kHz (bending radius: 3.5 mm). This demonstrates the sector-result mobility increase in a-IGZO-based circuits beneath tensile mechanical strain. Long-term reliability is evaluated with 20 00zero cycles of repeated bending and reflattening while not circuit failure.

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