PROJECT TITLE :
The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs
During this paper, we introduce our work on material characteristics, device characteristics, and performance concerns for armchair graphene nanoribbons (AGNRs) and AGNR field-effect transistors (AGNRFETs). Initial, we show that the effective-mass-versus-band-gap relationship can be described by a cluster of lines. By simply tight-binding a model considering solely the primary-nearest neighbor interaction, the effective-mass-versus-band-gap relationship for AGNRs can be described by two lines crossing zero, that is additional separated into 3 lines if considering third-nearest neighbor interaction and edge bond relaxation. Second, we have a tendency to show the quantum transport calculations for AGNRFETs. We have a tendency to found that a smaller/larger off-state leakage current in the $I_D$– $V_G$ curve might be always accompanied with a smaller/larger on-current within the $I_D$–$V_D$ curve, that is then explained by full complex band structure characteristics. Finally, we have a tendency to show that, to achieve a sure on-current–off-current ratio for ten-nm AGNRFETs, sleek edges are required for AGNRs with a width of concerning three nm at most.
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