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The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs

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PROJECT TITLE :

The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs

ABSTRACT :

During this paper, we introduce our work on material characteristics, device characteristics, and performance concerns for armchair graphene nanoribbons (AGNRs) and AGNR field-effect transistors (AGNRFETs). Initial, we show that the effective-mass-versus-band-gap relationship can be described by a cluster of lines. By simply tight-binding a model considering solely the primary-nearest neighbor interaction, the effective-mass-versus-band-gap relationship for AGNRs can be described by two lines crossing zero, that is additional separated into 3 lines if considering third-nearest neighbor interaction and edge bond relaxation. Second, we have a tendency to show the quantum transport calculations for AGNRFETs. We have a tendency to found that a smaller/larger off-state leakage current in the $I_D$– $V_G$ curve might be always accompanied with a smaller/larger on-current within the $I_D$–$V_D$ curve, that is then explained by full complex band structure characteristics. Finally, we have a tendency to show that, to achieve a sure on-current–off-current ratio for ten-nm AGNRFETs, sleek edges are required for AGNRs with a width of concerning three nm at most.


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The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs - 4.6 out of 5 based on 54 votes

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