PROJECT TITLE :
Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates
During this paper, we had successfully implemented versatile high-gate staggered amorphous In–Ga–Zn–O (a-IGZO) skinny-film transistors (TFTs) on colorless and clear polyimide (PI)-primarily based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The use of the selectively coated unleash layer between the nanocomposite PI film and the glass carrier ensured sleek debonding of the plastic substrate once TFT fabrication. The TFTs showed tight performances (with mobility $>hbox10 hboxcm^2/hboxVcdot hboxs$ ) either as fabricated or as debonded from the carrier glass. By bending the devices to different radii of curvature (from a flat state to an outward bending radius of five mm), influences of mechanical strains on the characteristics of versatile a-IGZO TFTs were also investigated. In general, the mobility of the flexible a-IGZO TFT increased with the tensile strain, whereas the threshold voltage decreased with the tensile strain. The variation of the mobility in a-IGZO TFTs versus the strain appeared smaller than those observed for amorphous silicon TFTs.
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