PROJECT TITLE :
Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs
During this paper, a easy and accurate characterization method of the thermal impedance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) is proposed. This technique depends on low-frequency S-parameter measurements within the one hundred Hz–three GHz frequency range. It is shown that feedback hybrid parameter $h_12$ provides an image of the thermal impedance in the frequency domain, which is freelance of the dimensions of the transistor. Terribly short thermal time constants involved in SiGe HBTs are accurately determined by this technique, additionally because the temperature dependence of the thermal impedance during a truly simple manner as electrical measurements can be performed in dc conditions either on a wafer or on an connected die. Finally, a nonlinear electrical equivalent circuit model is extracted, that can be readily implemented in pc-aided style software for nonlinear simulation of any SiGe HBT circuit.
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