A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application


Crossbar array design is sometimes used for the high-density integration of the RRAM device. But, the large sneak current in the passive crossbar array limits the rise in the mixing density. In this temporary, the bipolar $hboxTiN/TaO_x/hboxPt$ RRAM device is proposed because the dynamic selector for the unipolar $hboxPt/TaO_x/hboxPt$ RRAM device to suppress the sneak current within the crossbar array. The testing results show that the bipolar RRAM can act as a sensible selector, and the sneak current is reduced by about 2 orders estimated by the half of $V_rm read$ voltage theme. With the suppressed sneak current, the utmost size of the crossbar array with the bipolar RRAM selector will be increased to additional than 1 Mb in step with the simulation results, indicating that the bipolar RRAM selector has great potential for the high-density memory applications.

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