A New Mobility Extraction Technique Based on Simultaneous Ultrafast $I_$–$V_$ and $C_$– $V_$ Measurements in MOSFETs


Channel carrier mobility in MOSFETs is a key parameter for method development, material selection, and device modeling. The existing techniques for mobility evaluation suffer from a number of of the following shortcomings: slow speed and vulnerability to quick trapping, drain bias $(V_d)$ dependence, cable-changing, sensitivity to gate leakage, advanced procedure, and a want for simulation. This paper proposes and develops a new technique to overcome these shortcomings. $I_d$–$V_g$ and $C_rm cg$–$V_g$ are simultaneously measured so that the effect of $V_d$ on mobility is inherently taken under consideration, and therefore the measured mobility becomes $V_d$-freelance. The cable connection switching between $I_d$–$V_g$ and $C_rm cg$–$V_g$ measurements is avoided, and also the measurement completes in one pulse. This permits the measurement time reducing to the order of microseconds and, in turn, minimizing the impact of charge trapping. Not like the quality high-frequency $C_rm cg$– $V_g$, $C_rm cg$ is in- ependent of gate leakage here, and also the applicability of latest technique to skinny gate oxides of high gate leakage can be demonstrated. These benefits, together with its straightforward implementation, should make this technique a straightforward and sturdy tool for process development, material selection, and device modeling in future generations of CMOS technology.

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