Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

1 1 1 1 1 Rating 4.78 (46 Votes)

PROJECT TITLE :

A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

ABSTRACT :

An original model of the potential barrier in the channel of bipolar static induction transistors (BSITs) is presented. The model permits us to guage the potential barrier height for an arbitrary gate topology and to accurately predict the minority and majority carrier densities at the middle of the channel for a generic gate bias. The validity of the model is verified by comparison with numerical simulations of BSIT structures reported by other authors and with original simulations dole out on silicon (Si) and silicon carbide (SiC) junction field-result transistors.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs - 4.8 out of 5 based on 46 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...