A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs


An original model of the potential barrier in the channel of bipolar static induction transistors (BSITs) is presented. The model permits us to guage the potential barrier height for an arbitrary gate topology and to accurately predict the minority and majority carrier densities at the middle of the channel for a generic gate bias. The validity of the model is verified by comparison with numerical simulations of BSIT structures reported by other authors and with original simulations dole out on silicon (Si) and silicon carbide (SiC) junction field-result transistors.

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