Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

1 1 1 1 1 Rating 4.71 (68 Votes)

PROJECT TITLE :

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

ABSTRACT :

An occasional-temperature metallic-zinc-target reactive sputtering technology is employed to fabricate a ZnO skinny-film transistor (TFT). The impact of the $hboxO_2/hboxAr$ flow rate ratio on the performance of the resulting TFTs is investigated intimately. It is found that an $hboxO_2/hboxAr$ ratio of 0.75–0.eight produces devices with the most effective performance. The most processing temperature employed in this brief is a hundred and fifty $^circhboxC$, and the fabricated TFTs have a saturation mobility of 7.4 $hboxcm^2/(hboxVcdot hboxs)$, an on–off current ratio of a lot of than $hbox1 times hbox10^7$, and a subthreshold swing of 0.58 V/dec. Experimental results additionally show that using $hboxSiO_x$ as gate dielectric rather than $hboxSiN_x$ can improve both carrier mobility and subthreshold.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target - 4.7 out of 5 based on 68 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...