Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission


An experimental study is presented to probe the interface barriers of dopant-segregated silicide–Si diodes with internal photoemission. The spatial data of the interface dipoles, that is believed to be the reason for the effective Schottky barrier height (SBH) modification, is extracted from the sphere dependence of the barrier heights. A clear distinction between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a $hboxp^+hbox- hboxn$ junction whereas arsenic DS forms a “Shannon” junction with a absolutely depleted 1.five-nm doping depth in front of the silicide.

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