Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs


An analytical compact drain current model for undoped (or gently doped) short-channel triple-gate fin-shaped field-impact transistors (finFETs) is presented, taking into account quantum-mechanical and short-channel effects like threshold-voltage shifts, drain-induced barrier lowering, and subthreshold slope degradation. Within the saturation region, the effects of series resistance, surface roughness scattering, channel length modulation, and saturation velocity were additionally considered. The proposed model has been validated by comparing the transfer and output characteristics with device simulations and with experimental results. The good accuracy and also the symmetry of the model build it appropriate for implementation in circuit simulation tools.

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