PROJECT TITLE :
A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver
A very compact one-time-programmable memory consisting of an oxide antifuse and a polysilicon diode driver is proposed in this transient. The memory cell is constructed using a standard CMOS process without any extra masks to reduce the fabrication price. The planning method to achieve the required performance of varied components is presented well. The technology has been demonstrated with a fabricated chip from a customary zero.eighteen- $muhboxm$ CMOS TSMC technology.
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