A Vertical Power MOSFET With an Interdigitated Drift Region Using High- Insulator


A vertical power MOSFET with an interdigitated drift region using high-$k$ (Hk) insulator (Hk-MOSFET) is studied. Because of the very fact that almost all of the electric displacement lines made by the costs of the depleted drift region underneath reverse bias are through the Hk insulator, abundant heavier doping concentration can be utilized in the drift region when comparing with a conventional MOSFET with the same breakdown voltage. It is shown that the precise on-resistance of the Hk-MOSFET is such as that of the superjunction MOSFET (SJ-MOSFET) with the same breakdown voltage. The turn-on and turn-off times are found to be little longer than those of the standard MOSFET and also the SJ-MOSFET. The theoretical results of the electrical characteristics are in sensible agreement with the results from numerical simulations.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Identification of Oil–Water Flow Patterns in a Vertical Well Using a Dual-Ring Conductance Probe ArrayABSTRACT:During this paper, a dual-ring conductance probe array-based mostly well logging instrument was developed
PROJECT TITLE :Study of Random Variation in Germanium-Source Vertical Tunnel FETABSTRACT:An optimally designed germanium-source vertical tunnel FET (V-TFET) is investigated using technology computer aided style simulation. Three
PROJECT TITLE :Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on SiABSTRACT:We have a tendency to demonstrate improved performance thanks to enhanced electrostatic control achieved by diameter scaling
PROJECT TITLE :Fully Vertical GaN p-i-n Diodes Using GaN-on-Si EpilayersABSTRACT:Using GaN-on-Si epilayers, for the first time, fully vertical p-i-n diodes are demonstrated when Si substrate removal, transfer, and n-electrode
PROJECT TITLE :Programming Current Reduction via Enhanced Asymmetry-Induced Thermoelectric Effects in Vertical Nanopillar Phase-Change Memory CellsABSTRACT:Thermoelectric effects are envisioned to cut back programming currents

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry