Unified Scale Length for Four-Terminal Double-Gate MOSFETs


A unified scale length formula for four-terminal double-gate (DG) MOSFETs is proposed during this paper to supply a suggestion for device design to obtain a sensible threshold voltage and a subthreshold swing. By investigating the boundary conditions for Laplace's equation within the channel of DG MOSFETs, the evanescent-mode analysis technique is extended to create a unified scaling scheme. The unified model is proved to be applicable to two common device structures: ultrathin-body silicon-on-insulator and symmetric DG MOSFETs primarily based on two-D technology pc-aided style simulation. With this model, the connection among totally different well-known scaling rules will be well explained and understood.

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