PROJECT TITLE :

A New 2T Contact Coupling Gate MTP Memory in Fully CMOS Compatible Process

ABSTRACT :

A new fully logic process compatible 2T multitime programmable (MTP) memory cell has been introduced for embedded logic nonvolatile memory (NVM) applications. The cell adopts a completely unique contact coupling gate structure as an additional management gate for highly economical operation and high-density memory applications. A brand new 2T n-channel MTP a pair of-Kb memory take a look at chip has been also successfully demonstrated on pure 0.eighteen-$mu hboxm$ CMOS logic method while not additional masking or process step. Furthermore, the embedded 2T MTP cell performs an efficiently program/erase operation by CHE injection and FN tunnel with highly reliable endurance and retention characteristics.


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