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Modeling of Vibrating-Body Field-Effect Transistors Based on the Electromechanical Interactions Between the Gate and the Channel

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PROJECT TITLE :

Modeling of Vibrating-Body Field-Effect Transistors Based on the Electromechanical Interactions Between the Gate and the Channel

ABSTRACT :

A coupled analysis method for the mechanical and electrical systems of vibrating-body field-effect transistors (VB-FETs) is described. To accommodate energy transfer between the gate and also the FET channel, we tend to represent the FET with a resistanceā€“capacitance ladder circuit and use the Lagrange operate to derive motion equations. By solving the equations, we tend to derive the typical electrical characteristics of VB-FETs, specifically, the transconductance and this gain. The results show that this gain is obtained even above the cutoff frequency of the FET at the antiresonance frequency of the mechanical vibrator. These characteristics strongly rely on the device dimensions and operating conditions. This means that a coupled analysis is useful for determining an appropriate style of VB-FETs.


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Modeling of Vibrating-Body Field-Effect Transistors Based on the Electromechanical Interactions Between the Gate and the Channel - 4.8 out of 5 based on 49 votes

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