PROJECT TITLE :

Nanowire FET Biosensors on a Bulk Silicon Substrate

ABSTRACT :

A biosensor based mostly on a nanowire field-result transistor is demonstrated on a bulk silicon wafer for low-value applications. The silicon nanowire is fabricated employing a easy reactive-ion etching technique called the Bosch process. The sensor operation of the fabricated device is confirmed as a proof of concept by detecting the negatively and absolutely charged polymers on the nanowire surface in real time. The drain current of the device is clearly modulated by the charge polarity of the polymers. Additionally, the specific binding of the antigen and therefore the antibody for avian influenza is also detected by a real-time label-free electrical technique for practical applications. Control experiments support that a charged species solely on the nanowire surface ends up in a important amendment in the drain current of the sensor. The proposed approach in bulk nanowire biosensors paves the method for the appliance of complementary metal–oxide–semiconductor technology for low-cost and miniaturized biosensors while not external transducers; this approach is engaging in disposable and portable applications.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


PROJECT TITLE :A Flexible Piezoelectric-Pyroelectric Hybrid Nanogenerator Based on P(VDF-TrFE) Nanowire ArrayABSTRACT:The piezoelectric and pyroelectric effects are well known and are widely used for energy harvesting and self-powered
PROJECT TITLE :Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell StabilityABSTRACT:During this paper, we have a tendency to present a variability-aware three-D mixed-mode
PROJECT TITLE :Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate- All-Around Junctionless Nanowire FETABSTRACT:Low-frequency noise (LFN) behaviors, characterised with an SONOS-primarily based gate-all-around
PROJECT TITLE :Impact of Strain on Tunneling Current and Threshold Voltage in III–V Nanowire TFETsABSTRACT:A simulation study on the consequences of different strain configurations on n-sort III–V-based mostly nanowire tunnel-FETs
PROJECT TITLE :Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on SiABSTRACT:We have a tendency to demonstrate improved performance thanks to enhanced electrostatic control achieved by diameter scaling

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry