1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors


1/f noise is studied in twin-gated InAs nanowire transistors consisting of an omega high gate with high- $k$ atomic layer deposited dielectric and silicon dioxide to substrate back gate. Noise spectra at varying gate bias mixtures are compared from devices with differing top-gate lengths to separate the noise contributions of the prime-gated channel from the ungated access portion, including the metal–nanowire contacts. For a given device geometry, it is attainable to bias the device into four different regimes where the resistance and therefore the noise amplitude can every be independently dominated by either the channel or the access/contact regions. When the device is fully within the on state, the access/contact regions dominate both resistance and noise. When the device is operating near or below threshold, the channel dominates resistance and noise. For the bottom quantity of overall 1/f noise, most of the nanowire ought to be covered by the high gate, minimizing the access region length.

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