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A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling

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ABSTRACT:

A new approach to implementing correlated high-frequency noise in bipolar junction transistor (BJT) large-signal compact models is developed by placing an $RC$ -delayed noise current between the base and collector nodes. The approach reproduces the two stages of noise transport in a BJT, i.e., noise generation in the base and emitter and transportation through the collector–base junction space-charge region (CB SCR). The frequency dependence of the intrinsic noise sources due to the CB SCR is fully described with an accuracy value up to the second order of $omega$. As an example, the negative frequency dependence of $S_{rm ic}$ is correctly described for the first time. The approach is applicable to any large-signal compact model, and it is demonstrated using measurement data in both InGaP/GaAs heterojunction bipolar transistors (HBTs) and SiGe HBTs.


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A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling - 4.8 out of 5 based on 25 votes

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