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1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method

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ABSTRACT:

We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfacial $ hbox{SiO}_{2}$ layer formed by nitric acid oxidation of silicon and a 40-nm-thick $hbox{SiO}_{2}$ layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10–15 V.


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1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method - 4.9 out of 5 based on 70 votes

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