Structural and Electrical Characteristics of Dielectric Embedded MIM Capacitors for Analog IC Applications


In this study, we develop a high-performance metal–insulator–metal (MIM) capacitor using a high- $k$$hbox{Lu}_{2} hbox{O}_{3}$ amorphous film for radio-frequency and mixed-signal applications. The Ni/ $hbox{Lu}_{2}hbox{O}_{3}$/TaN capacitor exhibited a high capacitance density, a low leakage-current density, and a relatively low quadratic voltage coefficient of capacitance. The leakage current at the low electric field ($<$ 1.4 MV/cm) was dominated by the Schottky emission, whereas the Poole–Frenkel effect plays in the high electric field. In addition, the effects of constant voltage stress on leakage current and voltage linearity were comprehensively investigated, and excellent device reliability was also demonstrated. The Ni/ $hbox{Lu}_{2}hbox{O}_{3}$/TaN MIM capacitor appears to be very promising for future IC technologies.

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