Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Investigation of the Statistical Variability of Static Noise Margins of SRAM Cells Using the Statistical Impedance Field Method

1 1 1 1 1 Rating 4.80 (49 Votes)

PROJECT TITLE :

Investigation of the Statistical Variability of Static Noise Margins of SRAM Cells Using the Statistical Impedance Field Method

ABSTRACT:

The statistical variability of the static noise margin of a six-transistor bulk complementary metal–oxide–semiconductor static random access memory (SRAM) cell due to random doping fluctuations (RDFs) is investigated via 3-D technology computer-aided design simulations. The SRAM cell is created through 3-D process simulations of the entire cell as a single structure. The process flow is based on a typical 32-nm technology. The effects of RDFs on the cell performance are investigated using the highly efficient statistical impedance field method.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Investigation of the Statistical Variability of Static Noise Margins of SRAM Cells Using the Statistical Impedance Field Method - 4.8 out of 5 based on 49 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...