PROJECT TITLE :

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Gate Dielectric Under PBTI Stress

ABSTRACT:

The reliability performance of $hbox{In}_{x}hbox{Ga}_{1-x}hbox{As}$ n-type metal–oxide–semiconductor field-effect transistors with $hbox{Al}_{2}hbox{O}_{3}$ gate dielectric under positive-bias temperature instability stress is investigated systematically. A model of stress-induced border traps was proposed to interpret all charge pumping and $I$–$V$ experimental results excellently. The stress-induced border traps include recoverable donor traps and permanent acceptor traps with respective energy densities $Delta D_{rm SOX}^{ rm Donor}(E)$ and $Delta D_{rm SOX}^{rm Acceptor}(E)$. The shapes of $Delta D_{rm SOX}^{rm Donor}(E)$ and $Delta D_{rm SOX}^{rm Acceptor}(E)$ have been extracted from experimental data. $Delta D_{rm SOX}^{rm Acceptor}(E)$ mainly distributes in the conduction band of InGaAs with a tail extending to the mid-gap, whereas $Delta D_{rm SOX}^{rm Donor}(E)$ has a large distribution inside the energy gap and extends to the conduction band. The high density of $ Delta D_{rm SOX}^{rm Donor}(E)$ in the energy gap induces large degradation in the off-current, which is particularly serious when the In composition $x$ is raised- to 0.65.


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