Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Gate Dielectric Under PBTI Stress

1 1 1 1 1 Rating 4.80 (25 Votes)

PROJECT TITLE :

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Gate Dielectric Under PBTI Stress

ABSTRACT:

The reliability performance of $hbox{In}_{x}hbox{Ga}_{1-x}hbox{As}$ n-type metal–oxide–semiconductor field-effect transistors with $hbox{Al}_{2}hbox{O}_{3}$ gate dielectric under positive-bias temperature instability stress is investigated systematically. A model of stress-induced border traps was proposed to interpret all charge pumping and $I$–$V$ experimental results excellently. The stress-induced border traps include recoverable donor traps and permanent acceptor traps with respective energy densities $Delta D_{rm SOX}^{ rm Donor}(E)$ and $Delta D_{rm SOX}^{rm Acceptor}(E)$. The shapes of $Delta D_{rm SOX}^{rm Donor}(E)$ and $Delta D_{rm SOX}^{rm Acceptor}(E)$ have been extracted from experimental data. $Delta D_{rm SOX}^{rm Acceptor}(E)$ mainly distributes in the conduction band of InGaAs with a tail extending to the mid-gap, whereas $Delta D_{rm SOX}^{rm Donor}(E)$ has a large distribution inside the energy gap and extends to the conduction band. The high density of $ Delta D_{rm SOX}^{rm Donor}(E)$ in the energy gap induces large degradation in the off-current, which is particularly serious when the In composition $x$ is raised- to 0.65.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Gate Dielectric Under PBTI Stress - 4.8 out of 5 based on 25 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...