PROJECT TITLE :

Planar GeOI TFET Performance Improvement With Back Biasing

ABSTRACT:

Reverse back biasing of a planar germanium-on-insulator tunneling field-effect transistor provides for significant improvement in $I_{rm ON}/I_{rm OFF}$, by over an order of magnitude for 0.25 V operating voltage. Optimization of the gate-to-source overlap and source doping gradient is key to maximizing the benefit of back biasing.


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