Enhanced Performance of LWIR LED Devices by Backside Thinning and Isolating the Pixels


We observed a threefold increase in light emission power for long-wave infrared (LWIR) light-emitting diode (LED) devices by backside thinning and isolating the individual pixel from others. The proposed technique of backside thinning and isolating bottom emitting LED devices resulted in high yield of devices in an array. The voltage drop of the etched device is lower compared with the unetched device. This newly developed technique of device isolation opens the path to further device performance improvement by using grating and lenslet deposition on an individual LED pixel.

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