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Highly Uniform, Self-Compliance, and Forming-Free ALD -Based RRAM With Ge Doping

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PROJECT TITLE :

Highly Uniform, Self-Compliance, and Forming-Free ALD -Based RRAM With Ge Doping

ABSTRACT:

Atomic layer deposited (ALD) $hbox{HfO}_{2}$ resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the $hbox{HfO}_{2}$, which lowers the oxygen-vacancy formation energy.


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Highly Uniform, Self-Compliance, and Forming-Free ALD -Based RRAM With Ge Doping - 4.9 out of 5 based on 71 votes

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