On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy


Using the model developed in Part I of this two-part paper, the simulated dc sweep and pulse transient characteristics of a metal oxide resistive random access memory cell are corroborated with the experimental data of $hbox{HfO}_{x}$ memory. Key switching features such as the abrupt SET process, gradual RESET process, current fluctuation in the RESET process, and multilevel resistance state distributions are captured by the simulation. The current fluctuation in the RESET process is caused by the competition between the simultaneous oxygen vacancy recombination and generation processes. The origin of the high-resistance state variation and the tail bit problem are attributed to the variation of the tunneling gap distances and the stochastic nature of new Vo generation in the tunneling gap region, respectively. The use of the write–verify technique and a bilayer oxide structure are proposed to achieve a tighter resistance distribution.

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