Anodic Nonvolatile RRAM


We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric $hbox{Nb}_{2}hbox{O}_{5}$ films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer. After the electroforming process, $hbox{Au/Nb}_{2}hbox{O}_{5}/hbox{Nb/Si}$ sandwich memory cells demonstrate reproducible direct current and pulse mode switching between two resistance states with a resistance on-off ratio around $hbox{10}^{3}$. Low and high resististive states show ohmic conductivity and field-assisted Poole–Frenkel-type conductivity, respectively. Nonvolatile resistance storage was traced within 40 days to quantify retention characteristics of the $ hbox{Nb}_{2}hbox{O}_{5}$ memristor. The low-temperature anodic oxidation of Nb was found to be feasible to fabricate high-density cross-point memory with 3-D stack structures.

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