PROJECT TITLE :

Impact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric

ABSTRACT:

We investigated the effect of forming gas (5% $hbox{H}_{2}/hbox{95}% hbox{N}_{2}$) annealing on surface-channel $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ MOSFETs with atomic-layer-deposited $ hbox{Al}_{2}hbox{O}_{3}$ as the gate dielectric. We found that a forming gas anneal (FGA) at 300 $^{circ}hbox{C}$ for 30 min was efficient at removing or passivating positive fixed charges in $hbox{Al}_{2}hbox{O}_{3}$ , resulting in a shift of the threshold voltage from $-$0.63 to 0.43 V and in an increase in the $I_{rm on}/I_{rm off}$ ratio of three orders of magnitude. Following FGA, the MOSFETs exhibited a subthreshold swing of 150 mV/dec, and the peak transconductance, drive current, and peak effective mobility increased by 29%, 25%, and 15%, respectively. FGA significantly improved the source- or drain-to-substrate junction isolation, with a reduction of two orders of magnitude in the reverse bias leakage exhibited by the Si-implanted $ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As} hbox{n}^{+}/hbox{p}$ junctions, which is consistent with passivation of midgap defects in $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ by the FGA process.


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