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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

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PROJECT TITLE :

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

ABSTRACT:

Operation up to 300 $^{circ}hbox{C}$ of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or– nor gate operated on $-$15 V supply voltage from 27 $^{circ}hbox{C}$ up to 300 $^{circ}hbox{C}$. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.


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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC - 4.8 out of 5 based on 46 votes

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