Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation


The forward voltage drops of pin diodes with the carbon implantation or thermal oxidation process using a drift layer of 120 $muhbox{m}$ thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of pin diodes with the standard or carbon implantation process show almost the same tendency. In the reverse recovery characteristics at 250 $^{circ}hbox{C}$, pin diodes with the carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics suggest that the forward voltage drops depend on the bulk carrier lifetime. In the reverse recovery characteristics, other recombination paths, such as interface or surface recombination, become dominant.

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