PROJECT TITLE :
High-Gain InAs Planar Avalanche Photodiodes
We have a tendency to report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have an occasional background doping of and giant depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at −26 V at two hundred K while not inducing a important tunneling current. No edge breakdown was observed inside the APDs. The surface leakage current was found to be low with a gain normalized dark current density of four hundred μAcm−2 at −20 V at 200 K.
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