Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

High-Gain InAs Planar Avalanche Photodiodes

1 1 1 1 1 Rating 4.78 (46 Votes)


High-Gain InAs Planar Avalanche Photodiodes


We have a tendency to report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have an occasional background doping of and giant depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at −26 V at two hundred K while not inducing a important tunneling current. No edge breakdown was observed inside the APDs. The surface leakage current was found to be low with a gain normalized dark current density of four hundred μAcm−2 at −20 V at 200 K.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

High-Gain InAs Planar Avalanche Photodiodes - 4.8 out of 5 based on 46 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...