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Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

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PROJECT TITLE :

Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

ABSTRACT:

An occasional-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc–oxide electric-double-layer (EDL) transistor shows a threshold voltage ( $V_mathrm th$ ) of roughly −zero.one V and acts as a load. An indium-gallium–zinc-oxide EDL transistor shows a $V_mathrm th$ of $sim zero.3$ V and acts as a driver. The depletion-load inverter shows a high voltage gain of $>40$ and a slender transition width of $<0.2$ V at low provide voltage of two V. The proposed low-voltage inverter could notice potential applications in moveable electronics and biosensors.


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Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors - 4.9 out of 5 based on 18 votes

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