Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer


In this letter, the impedance behavior of Cu–SiO2 programmable metallization cell devices containing a skinny oxide switching layer is presented. Frequency sweeps were performed throughout impedance spectroscopy on devices with different diameters and a vary of programmed resistance states. The experimental results show that these devices will be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel $RC$ equivalent model was verified with SPICE circuit simulations.

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