Impact of Strain on Tunneling Current and Threshold Voltage in III–V Nanowire TFETs


A simulation study on the consequences of different strain configurations on n-sort III–V-based mostly nanowire tunnel-FETs is presented, with the aim to see optimal strain conditions to boost device performance. We tend to find that both the biaxial tensile and also the uniaxial compressive stress shift up the valence band. Biaxial stress, however, lowers the conduction band in addition, so providing the most important reduction of the energy bandgap. Instead, the gap variation is limited for the biaxial compressive and uniaxial tensile strains. Moreover, for these strain conditions, the bottom conduction subband is not connected to the highest valence subband via the imaginary wave vector however to a lower one. This ends up in an efficient bandgap higher than the expected, which reflects into a large threshold increase and a degradation of the ON-state current.

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